Insulating state of ultrathin epitaxial LaNiO3 thin films detected by hard x-ray photoemission
نویسندگان
چکیده
A. X. Gray,1,2 A. Janotti,3 J. Son,3 J. M. LeBeau,3 S. Ueda,4 Y. Yamashita,4 K. Kobayashi,4 A. M. Kaiser,1,2 R. Sutarto,5,6 H. Wadati,5,* G. A. Sawatzky,5 C. G. Van de Walle,3 S. Stemmer,3 and C. S. Fadley1,2 1Department of Physics, University of California, Davis, California 95616, USA 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 3Materials Department, University of California, Santa Barbara, California 93106-5050, USA 4NIMS Beamline Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan 5Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia, V6T 1Z1 Canada 6Canadian Light Source, University of Saskatchewan, Saskatoon, Saskatchewan, S7N0X4, Canada (Received 14 April 2011; revised manuscript received 5 July 2011; published 3 August 2011)
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